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 Data Sheet CURRENT MODE PWM CONTROLLER General Description
The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external components. They feature under-voltage lockout (UVLO) circuit with low start-up current, trimmed oscillator for precise duty cycle control, current sense comparator providing maximum current limiting and a totem pole output stage for increasing output current. In addition, these ICs also feature accurate protection against over-temperature, over-current and maximal output power. The AP3842C and AP3844C have UVLO thresholds of 16V(on) and 10V(off); The corresponding thresholds for AP3843C and AP3845C are 8.4 V(on) and 7.6V(off). The AP3842C and AP3843C can operate approaching 100% duty cycle; AP3844C and AP3845C can operate from zero to 50% duty cycle. These ICs are available in SOIC-8 and DIP-8 packages.
AP384XC Features
* *
* * * * * *
Low Start-up Current: 50A Robust VREF Line/Load Regulation Low Line Regulation : 4mV Low Load Regulation : 4mV High Stability of Reference Voltage over a Full Temperature Range: 0.2mV/ oC Operating Frequency up to 500KHz High PWM Frequency Stability over a Full Temperature Range: 2.5% High PWM Frequency Stability under a Full Supply Voltage Range: 0.2% Accurate Over-temperature Protection with Hysteresis UVLO with Hysteresis
Applications
* * * * * * Off-line Converter DC-DC Converter Voltage Adapter CRT Monitor Power Supply Desktop Power Supply DVD/STB Power Supply
SOIC-8
DIP-8
Figure 1. Package Types of AP3842C/3C/4C/5C
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Pin Configuration AP384XC
P/M Package (DIP-8/SOIC-8)
COMP VFB ISENSE RT/CT 1 2 3 4 8 7 6 5 VREF VCC OUTPUT GND
Figure 2. Pin Configuration of AP3842C/3C/4C/5C (Top View)
Pin Description
Pin Number 1 2 3 4 Pin Name COMP VFB ISENSE RT/CT Function This pin is the Error Amplifier output and is made available for loop compensation. The inverting input of the Error Amplifier. It is normally connected to the switching power supply output through a resistor divider. A voltage proportional to inductor current is connected to this input. The PWM uses this information to terminate the output switch conduction. The Oscillator frequency and maximum output duty cycle are programmed by connecting resistor RT to VREF and capacitor CT to ground. Operation to 500 kHz is possible. The combined control circuitry and power ground. This output directly drives the gate of a power MOSFET. Peak currents up to 1.0 A are sourced and sunk by this pin. The positive supply of the control IC. This is the reference output. It provides charging current for capacitor CT through resistor RT.
5 6 7 8
GND OUTPUT VCC VREF
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Functional Block Diagram AP384XC
VCC GND
7 34V 5 UVLO S/R 5V REF 8
VREF
2.50V
INTERNAL BIAS
VREF GOOD LOGIC
RT/CT
4
OSC
T
6
OUTPUT
OVER TEMP PROTECT ERROR AMP
(Note)
2R
S R R 1V CURRENT SENSE COMPARATOR PWN LATCH Note: Toggle flip-flop used for 3844C/45C only
VFB COMP ISENSE
2 1 3
Figure 3. Functional Block Diagram of AP3842C/3C/4C/5C
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Ordering Information
AP384XC Circuit Type Package M: SOIC-8 P: DIP-8 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube
AP384XC
Package
Temperature Range -40 to 85oC
Part Number Tin Lead AP3842/3/4/5CM AP3842/3/4/5CMTR Lead Free AP3842/3/4/5CM-E1 AP3842/3/4/5CMTR-E1 AP3842/3/4/5CP-E1 Tin Lead 3842/3/4/5CM 3842/3/4/5CM
Marking ID Lead Free 3842/3/4/5CM-E1 3842/3/4/5CM-E1 AP3842/3/4/5CP-E1
Packing Type Tube Tape & Reel Tube
SOIC-8 DIP-8
-40 to 85oC AP3842/3/4/5CP
AP3842/3/4/5CP
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Absolute Maximum Ratings (Note 1, 2)
Parameter Supply Voltage Output Current Analog Inputs Error Amp Output Sink Current Power Dissipation at TA< 25 oC (DIP-8) Power Dissipation at TA<25 oC (SOIC-8) Junction Operating Temperature DIP-8 Thermal Resistance (Junction to Ambient) SOIC-8 Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Machine Mode) TSTG TLEAD RJA 160 -65 to 150 +300 250
oC/W oC oC
AP384XC
Symbol VCC IO V(ANA) ISINK(E.A) PD (Note 3) PD (Note 3) TJ
Value 30
Unit V A V mA mW mW
oC oC/W
1
-0.3 to 6.3 10 1000 460 -40 to 150 140
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: All voltages are with respect to pin 5 and all currents are positive into specified terminal. Note 3: Board thickness 1.6mm, board dimension 90mm x 90mm.
Recommended Operating Conditions
Parameter
Oscillation Frequency Symbol f TA
Min -40
Max 500 85
Unit KHz
o
Ambient Temperature
C
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Electrical Characteristics
(VCC=15V, RT=10k CT=3.3nF, TA= -40 to 85oC, unless otherwise specified.)
Parameter REFERENCE SECTION Reference Output Voltage Total Output Variation Line Regulation Load Regulation Short Circuit Output Current Temperature Stability OSCILLATOR SECTION Oscillation Frequency Oscillator Amplitude Temperature Stability Voltage Stability Discharge Current ERROR AMPLIFIER SECTION Input Voltage Output Sink Current Output Source Current High Output Voltage Low Output Voltage Voltage Gain Power Supply Rejection Ratio CURRENT SENSE SECTION Maximum Input Signal Gain Power Supply Rejection Ratio Delay to Output Input Bias Current OUTPUT SECTION Low Output Voltage VOL VOH tR tF ISINK = 20mA ISINK = 200mA High Output Voltage ISOURCE = 20mA ISOURCE = 200mA Rise Time Fall Time TJ=25 C, CL=1nF (Note 6) TJ =25oC, CL=1nF (Note 6)
o
AP384XC
Symbol
Conditions
Min
Typ
Max
Unit
VREF VREF VREF ISC
TJ=25oC, IREF=1mA Line, Load, Temp. 12V VCC 25V 1mA IREF 20mA TA=25oC
4.90 4.82
5.00
5.10 5.18
V V mV mV mA mV/oC KHz V %
4 4 -100 0.2
15 15 -180 0.4
f VOSC
TJ=25oC Pin 4, peak to peak (Note 6) (Note 6) 12V VCC 25V Vpin 4 =2V(Note 7)
47
52 1.7 2.5 0.2
57
1 10.5
% mA
8.5
9.5
VI ISINK ISOURCE VOH VOL PSRR
Vpin 1=2.5V Vpin1=1.1V Vpin1=5V RL=15k to GND RL=15k to pin 8 2V VO 4V 12V VCC 25V Vpin1=5V(Note 4) (Note 4, 5) 12V VCC 25V (Note 4, 6) Vpin3 = 0 to 2V (Note 6)
2.45 5 -0.5 5
2.50 8 -0.8 7 0.7
2.55
V mA mA V
1.1
V dB dB
65 60
90 70
VI(MAX) GV PSRR
0.9 2.85
1 3 70 150 -3
1.1 3.15
V V/V dB
300 -10
ns A
IBIAS
0.1 1.4 13 12 14 13 50 50
0.4 2.2
V V V V
150 150
ns ns
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
Data Sheet CURRENT MODE PWM CONTROLLER Electrical Characteristics (Continued)
Parameter Symbol Conditions AP3842C/AP3844C AP3843C/AP3845C Min. Operation Voltage (After Turn On) PWM SECTION Max. Duty Cycle Min. Duty Cycle Start-Up Current Operating Supply Current Zener Voltage D(Max.) D(Max.) D(Min.) IST ICC(OPR) VZ TSHUT THYS Vpin3=Vpin2=0V ICC=25mA (Note 6) (Note 6) 30 50 8 34 AP3842C/AP3843C AP3844C/AP3845C 95 46 97 48 100 50 0 80 12 % % % A mA V VOPR (Min.) AP3842C/AP3844C AP3843C/AP3845C Min 15 7.8 8.5 7.0 Typ 16 8.4 10.0 7.6 Max 17 9.0 11.5 8.2 Unit V V V V UNDER -VOLTAGE LOCKOUT SECTION Start Threshold VTH(ST)
AP384XC
TOTAL STANDBY CURRENT SECTION
OVER-TEMPERATURE PROTECT SECTION Shutdown Temperature Temperature Hysteresis 155 25
oC oC
Note 4: Parameters are tested at trip point of latch with Vpin2 = 0. Note 5: Here gain is defined as: VPin 1 A= , 0 Vpin3 0.8V VPin 3 Note 6: These parameters, although guaranteed, are not 100% tested in production. Note 7: This parameter is measured with RT=10k to VREF, it contributes 0.3mA of current to the measured value. So the total current flowing into the CT pin will be 0.3mA higher than the measured value approximately.
VREF 4.7k RT 2N2222
1
AP384XC COMP VREF VCC
8
A
VCC
1k ERROR AMP ADJUST 4.7k
100k
2
VFB
7
5k ISENSE ADJUST
0.1F
3
ISENSE OUTPUT RT/CT GND
6
1K 1W OUTPUT 0.1F
4
5
GND CT
Figure 4. Basic Test Circuit
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER ELectrical Characteristics (Continued)
Figure 4 is the basic test circuit for AP384XC. In testing, the high peak currents associated with capacitive loads necessitate careful grounding techniques. Timing and bypass capacitors should be connected close to pin 5 in a single point ground. The transistor and 5k potentiometer are used to sample the oscillator waveform and apply an adjustable ramp to pin 3.
AP384XC
Typical Performance Characteristics
Figure 5. Oscillator Dead Time vs. Timing Capacitor
Figure 6. Timing Resistor vs. Frequency
5.015
5.010
VCC=15V, IO=1mA
4.0 3.5
VCC=15V, TA=25 C
o
Saturation Voltage (V)
-20 0 20 40 60 80
o
Reference Voltage (V)
5.005
3.0 2.5 2.0 1.5 1.0 0.5
5.000
4.995
4.990
4.985
0.0
4.980 -40
-0.5
100 120
0
50
100
150
200
250
300
350
400
450
500
550
600
Ambient Temperature ( C)
Output Sink Current (mA)
Figure 7. Reference Voltage vs. Ambient Temperature
Figure 8. Output Saturation Characteristics
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Typical Performance Characteristics (Continued) AP384XC
90 80 70
60
60 50 40 30 20 10 0 10
Start-up Current (A)
VCC=15V, TA=25 C
o
50
Voltage Gain (dB)
40
30
100
1k
10k
100k
1M
20 -40
-20
0
20
40
60
o
80
100
120
Frequency (Hz)
Ambient Temperature ( C)
Figure 9. Error Amplifier Open-Loop Frequency Response
Figure 10. Start-up Current vs. Ambient Temperature
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
9
Data Sheet CURRENT MODE PWM CONTROLLER Typical Application
NTC Bridge Diode 1N4007*4 C2 0.01 600V D1 Byv26e R4 10 D2 1N4001
AP384XC
R19 10 + R3 39k 2W T D3 8TQ100 + C15 2.2n
J1 AC 90 to 265V
C1 47 +
R2 1M/ 0.25W
C14 100/400V
L3 10 C9 2200
C10 1000 +
C11 1
R20 2K
Z2 SA12A
J2 12V/5A
7 R12 100 2 C5 220p 1 R14 130k 5
Vcc VCC VFB COMP
C3 0.1
VREF RT/CT OUTPUT
8 R5 10k 4 C15 100p 6 R6 20 Q1 IRF830 U3 AZ431 R9 7.5k R10 0.51/1W R17 2k U2 PC817 W1 1k R18 3.9k C6 2200p/600V C4 3.3n C8 0.22 R15 100 R16 8.2k
GND
ISENSE
3
R7 1k C7 680p
R13 15k R11 820
U1 AP3842C/3C/4C/5C
Z1 1N5819
Figure 11. Typical Application of AP3842C/3C/4C/5C
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet CURRENT MODE PWM CONTROLLER Mechanical Dimensions SOIC-8 Unit: mm(inch) AP384XC
4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069)
0.320(0.013)
8
7
8
0.675(0.027) 0.725(0.029)
D
5.800(0.228) 6.200(0.244)
D 20:1
1.270(0.050) TYP
0.100(0.004) 0.300(0.012) R0.150(0.006)
0.800(0.031)
0.200(0.008)
1.000(0.039) 3.800(0.150) 4.000(0.157)
0 8
0.330(0.013) 0.510(0.020) 0.900(0.035)
1 5
R0.150(0.006)
0.190(0.007) 0.250(0.010)
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11
Data Sheet CURRENT MODE PWM CONTROLLER Mechanical Dimensions (Continued) DIP-8 Unit: mm(inch) AP384XC
0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP
6
6
5
3.710(0.146) 4.310(0.170) 4
3.200(0.126) 3.600(0.142)
4
3.000(0.118) 3.600(0.142)
0.510(0.020)MIN
0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN
0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370)
R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370)
6.200(0.244) 6.600(0.260)
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
12
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
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